Impact of encapsulation method on the adsorbate induced electrical instability of monolayer graphene
Sırrı Batuhan Kalkan, Alper Yanılmaz, and Cem Çelebi
Journal of Vacuum Science and Technology A 37, 051502 (2019)

The comparison of transient photocurrent spectroscopy measurements of Pulsed Electron Deposited ZnO thin film for air and vacuum ambient conditions
Mehmet Özdoğan, Serap Yiğen, Cem Çelebi, Gökhan Utlu
Thin Solid Films 680, 48-54 (2019)

Monitoring the characteristic properties of Ga-doped ZnO by Raman spectroscopy and atomic scale calculations
Seyda Horzum, Fadil Iyikanat, Ramazan Tuğrul Senger, Cem Çelebi, Mohamed Sbeta, Abdullah Yildiz, Tülay Serin
Journal of Molecular Structure, vol.1180 (2019)


Epitaxial graphene thermistor for cryogenic temperatures
S. B. Kalkan, S. Yiğen, and C. Çelebi
Sensors and Actuators A: Physical, 280, 8-13 (2018)

P3HT-graphene bilayer electrode for Schottky junction photodetectors
H. Aydın, S. B. Kalkan, C. Varlikli, and C. Çelebi
Nanotechnology 29, 145502 (2018)

The effect of adsorbates on the electrical stability of graphene studied by transient photocurrent spectroscopy
S. B. Kalkan, H. Aydın, D. Özkendir, and C. Çelebi
Appl. Phys. Lett. 112, 013103 (2018)


Few-Layer MoS2 as Nitrogen Protective Barrier
B. Akbali, A. Yanilmaz, A. Tomak, S. Tongay, C. Çelebi, and H. Sahin
Nanotechnology 28, 415706 (2017)

Electron field emission from SiC nanopillars produced by using nanosphere lithography
D. Yeşilpınar and C.Çelebi
J. Vac. Sci. Technol. B 35(4), 041801 (2017)


Epitaxial graphene contact electrode for silicon carbide based ultraviolet photodetector
E. Kuşdemir, D. Özkendir, V. Fırat, and C. Çelebi
J. Phys. D: Appl. Phys. 48, 095104 (2015)


Cleavage Induced Rows of Missing Atoms on ZnTe(110) Surface
C. Çelebi, O. Arı, and R. T. Senger
Phys. Rev. B, 87, 085308 (2013)

Control of the graphene growth rate on capped SiC surface under strong Si confinement
C. Çelebi, C. Yanık, A. G. Demirkol, and İsmet İ. Kaya,
Appl. Surf. Sci., 264, 56 (2013) 


The Effect of a SiC  Cap on the growth of Epitaxial Graphene on SiC in Ultra High Vacuum
C. Çelebi, C. Yanık, A. G. Demirkol, and İsmet İ. Kaya
Carbon, 50, 3026 (2012)


Surface Induced Asymmetry of Acceptor Wave Functions
C. Çelebi, J. K. Garleff, A. M. Yakunin, A. Yu. Silov, W. Van Roy, J. -M. Tang, M. E. Flatté, and P. M. Koenraad
Phys. Rev. Lett.,104, 086404 (2010). (Cover article)


Spatial Distribution of a Hole Localized on Acceptor in Deformed Crystal
A. M. Monakhov, N. I. Sablina, N. S. Averkiev, C. Çelebi, and P. M. Koenraad
Solid State Comm., 146, 416 (2008)

Atomically Precise Impurity Identification and Modification on the Mn Doped GaAs(110) Surface with Scanning Tunneling Microscopy
J.K.Garleff, C. Çelebi, W. Van Roy, J. -M. Tang, M. E. Flatté, and P. M. Koenraad
Phys. Rev. B, 78, 075313 (2008)

Anisotropic Spatial Structure of Deep Acceptor States in GaAs and GaP
C. Çelebi, P. M. Koenraad, A. Yu. Silov, W. Van Roy, A. M. Monakhov, J. -M.Tang, and M. E. Flatté,
Phys. Rev. B, 77, 075328 (2008)


Atomic Scale Study of the Impact of Strain and Composition of the Capping Layer on the Formation of InAs Quantum Dots
J. M. Ulloa, C. Çelebi, P. M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D. Mowbray, M. J. Steer, and M. Hopkinson,
J. Appl. Phys., 101, 081707 (2007)

Cross-sectional Scanning Tunneling Microscopy Study on II-VI Multilayer Structures
A. Wierts, J. M. Ulloa, C. Çelebi, P. M. Koenraad, H. Boukari, L. Maingault, R. André, and H. Mariette,
Appl. Phys. Lett.,91, 161907 (2007)


Capping of InAs Quantum Dots Grown on (311)BInP Studied by Cross-sectional Scanning Tunneling Microscopy
C. Çelebi, J. M. Ulloa, P. M. Koenraad, A. Simon, A. Letoublon, and N. Bertru,
Appl. Phys. Lett.,89, 02311 (2006)

Electronic and Optical Properties of InAs/InP Quantum Dots on InP(100) and InP(311)B Substrates
C. Cornet, A. Schliwa, J. Even, F. Doré, C. Çelebi, A. Letoublon, E. Macé, C. Paranthoën, A. Simon, P.M. Koenraad, N. Bertru, D. Bimberg, and S. Loualaiche,
Phys. Rev. B, 74, 035312 (2006)